Nguyen Van Huy, PhD - VNUK

Contact Information:

huy.nguyen@vnuk.edu.vn
+84 965 042 068

Nguyen Van Huy, PhD

Lecturer, Researcher

Biography

I finished my PhD in Physics at the University of Warwick with thesis title “Epitaxial growth of Ge buffers on (111) and (110) Si substrates using RP-CVD”. I then carried on doing research in semiconductor materials with the NanoSi group at Warwick Uni until 2015. From 2015-2018, I worked as a Process Development Engineer at IQE.plc in Cardiff.

 I recently joined VNUK Institute of Research and Executive Education in Danang, Vietnam (my hometown) at the end of 2018 after being abroad for 17 years. I hope to contribute to my local community and help build VNUK into an international standard university.

 

Education

  • Ph.D., Physics, University of Warwick, UK, 2012
  • MPhys, University of Warwick, UK, 2008
  • Bursary, Wanganui Collegiate School, New Zealand, 2003

Teaching activity

Introductory Physics for Biomedical Science, from 2019

Internet of Things, from 2019

Mechanics, from 2020

Semiconductor Devices, from 2020

Publications

  • Pablo Caño, Manuel Hinojosa, Huy Nguyen, Aled Morgan, David Fuertes Marrón, Iván García, AndrewJohnson, Ignacio Rey-Stolle. Hybrid III-V/SiGe solar cells grown on Si substrates through reverse graded buffers. Solar Energy Materials and Solar Cells, 0927-0248.
  • Huy Nguyen, V., Dobbie, A., Myronov, M., & Leadley, D. R. (2013). High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation. Journal of Applied Physics, 114(15), 154306. doi:10.1063/1.4825130
  • Myronov, M., Dobbie, A., Shah, V. A., Liu, X.-C., Nguyen, V. H., & Leadley, D. R. (2010). High Quality Strained Ge Epilayers on a Si0.2Ge0.8 / Ge / Si ( 100 )  Global Strain-Tuning Platform. Electrochemical and Solid-State Letters, 13(11), H388-H390.
  • Nguyen, V. H., Dobbie, A., Myronov, M., Norris, D. J., Walther, T., & Leadley, D. R. (2012). Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates. Thin Solid Films, 520(8), 3222-3226.
  • Dobbie, A., Nguyen, V. H., Morris, R. J. H., Liu, X.-C., Myronov, M., & Leadley, D. R. (2012). Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8 Reverse-Graded Buffers. Journal of The Electrochemical Society, 159(5), H490-H496.
  • Qiu, Y., Nguyen, V. H., Dobbie, A., Myronov, M., & Walther, T. (2013). Calibration of thickness-dependent k -factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy. Journal of Physics: Conference Series, 471(1), 012031.
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