Nguyen Van Huy

I finished my PhD in Physics at the University of Warwick with thesis title “Epitaxial growth of Ge buffers on (111) and (110) Si substrates using RP-CVD”. I then carried on doing research in semiconductor materials with the NanoSi group at Warwick Uni until 2015. From 2015-2018, I worked as a Process Development Engineer at IQE.plc in Cardiff.

 I recently joined VNUK Institute of Research and Executive Education in Danang, Vietnam (my hometown) at the end of 2018 after being abroad for 17 years. I hope to contribute to my local community and help build VNUK into an international standard university.

Introductory Physics for Biomedical Science, from 2019

Internet of Things, from 2019

Mechanics, from 2020

Semiconductor Devices, from 2020

• Epitaxy of thin films and novel low-dimensional Group-IV semiconductor structures (Si, Ge, Si_1-xGe_x, Si_1-xC_x, Ge_1-xSn_x, Ge_1-x-ySn_xSi_y, 3C-SiC, 4H-SiC, 6H-SiC etc) by Chemical Vapour Deposition (CVD) techniques
• Science and technology of materials and solid state devices for applications in electronics, photonics, optoelectronics, photovoltaics, sensors, MicroElectroMechanical Systems (MEMS) and NanoElectroMechanical systems (NEMS)

• Pablo Caño, Manuel Hinojosa, Huy Nguyen, Aled Morgan, David Fuertes Marrón, Iván García, AndrewJohnson, Ignacio Rey-Stolle. Hybrid III-V/SiGe solar cells grown on Si substrates through reverse graded buffers. Solar Energy Materials and Solar Cells, 0927-0248.
• Huy Nguyen, V., Dobbie, A., Myronov, M., & Leadley, D. R. (2013). High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation. Journal of Applied Physics, 114(15), 154306. doi:10.1063/1.4825130
• Myronov, M., Dobbie, A., Shah, V. A., Liu, X.-C., Nguyen, V. H., & Leadley, D. R. (2010). High Quality Strained Ge Epilayers on a Si0.2Ge0.8 / Ge / Si ( 100 )  Global Strain-Tuning Platform. Electrochemical and Solid-State Letters, 13(11), H388-H390.
• Nguyen, V. H., Dobbie, A., Myronov, M., Norris, D. J., Walther, T., & Leadley, D. R. (2012). Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates. Thin Solid Films, 520(8), 3222-3226.
• Dobbie, A., Nguyen, V. H., Morris, R. J. H., Liu, X.-C., Myronov, M., & Leadley, D. R. (2012). Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8 Reverse-Graded Buffers. Journal of The Electrochemical Society, 159(5), H490-H496.
• Qiu, Y., Nguyen, V. H., Dobbie, A., Myronov, M., & Walther, T. (2013). Calibration of thickness-dependent k -factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy. Journal of Physics: Conference Series, 471(1), 012031.