Nguyen Van Huy profile

Lecturer in Physics

Work place:
Lecturer at VN-UK Institute for Research & Executive Education.

Thông tin giảng viên

      • Ph.D. in Semiconductor Physics, University of Warwick, UK, 2012 June
      • MPhys , Physics (with honors), University of Warwick, UK, 2008 June
    • 08/2018 – present: Lecture/Researcher in Physics, VN-UK Institute for Research & Executive Education, the University of Danang
    • 06/2015 – 03/2018: Process Development Engineer, IQE Silicon, IQE plc., UK
    • 06/2013 – 05/2015: Research Scientist, NanoSi group, Department of Physics, University of Warwick, UK.
    • Epitaxy of thin films and novel low-dimensional Group-IV semiconductor structures (Si, Ge, Si1-xGex, Si1-xCx, Ge1-xSnx, Ge1-x-ySnxSiy, 3C-SiC, 4H-SiC, 6H-SiC etc) by Chemical Vapour Deposition (CVD) techniques
    • Science and technology of materials and solid state devices for applications in electronics, photonics, optoelectronics, photovoltaics, sensors, MicroElectroMechanical Systems (MEMS) and NanoElectroMechanical systems (NEMS)
    • Huy Nguyen, V., Dobbie, A., Myronov, M., & Leadley, D. R. (2013). High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation. Journal of Applied Physics, 114(15), 154306. doi:10.1063/1.4825130
    • Myronov, M., Dobbie, A., Shah, V. A., Liu, X.-C., Nguyen, V. H., & Leadley, D. R. (2010). High Quality Strained Ge Epilayers on a Si0.2Ge0.8 / Ge / Si ( 100 )  Global Strain-Tuning Platform. Electrochemical and Solid-State Letters, 13(11), H388-H390
    • Nguyen, V. H., Dobbie, A., Myronov, M., Norris, D. J., Walther, T., & Leadley, D. R. (2012). Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates. Thin Solid Films, 520(8), 3222-3226.
    • Dobbie, A., Nguyen, V. H., Morris, R. J. H., Liu, X.-C., Myronov, M., & Leadley, D. R. (2012). Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8 Reverse-Graded Buffers. Journal of The Electrochemical Society, 159(5), H490-H496
    • e energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy. Journal of Physics: Conference Series, 471(1), 012031.


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